Alloying method for a image display device using laser irradiation

ABSTRACT

An alloying method includes steps of forming a metal layer on a semiconductor that is then transferred to a material having a low thermal conductivity. An interface between the semiconductor and the metal layer is formed into an alloy by irradiating the interface with a laser beam having a wavelength that is absorbable in at least one of the semiconductor and the metal layer. Preferably, the material having a low thermal conductivity is a resin or amorphous silicon. Because the entire semiconductor is not heated and only a necessary portion is locally heated, the necessary portion can be readily alloyed to be converted into an ohmic contact without exerting adverse effects on the characteristics of the semiconductor device.

This application claims priority to Japanese Patent Application NumberJP2002-009154 filed Jan. 17, 2002 and Japanese Patent Application NumberJP2002-362214 filed Dec. 13, 2002, both of which are incorporated hereinby reference.

BACKGROUND OF THE INVENTION

The present invention relates to a method of alloying an interfacebetween a semiconductor and a metal layer, thereby forming an ohmiccontact, and to a wiring forming method, a display unit forming method,and an image display unit fabricating method using the alloying method.

In the case of forming a metal layer as an electrode on a semiconductordevice, it is required to convert a portion, being in contact with thesemiconductor device, of the electrode into an ohmic contact to thesemiconductor device. The conversion of a portion of an electrode intoan ohmic contact has been typically performed by thermally alloying theportion of the electrode with the semiconductor device. For example, inthe case of converting a portion, being in contact with an n-GaAs layerof a semiconductor device, of a contact metal AuGe/Ni/Au into an ohmiccontact, the semiconductor device is heated at 420° C. for about oneminute, to alloy the portion of the contact metal with the n-GaAs layerof the semiconductor device.

In the case of forming an ohmic contact by the so-called thermalalloying technique as described above, since the entire semiconductordevice is heated, characteristics of the semiconductor device may bedegraded. For example, to alloy an interface between the n-GaAs layerand the contact metal AuGe/Ni/Au for converting the interface into anohmic contact, as described above, it is required to the entiresemiconductor device at 420° C. for about one minute. In this case, ifthe n-GaAs layer is directly formed on a GaAs substrate, there is noproblem; however, if an epitaxial layer not withstanding the aboveheating temperature is formed under the n-GaAs layer, or if aninsulating film made from a resin or the like is formed before formationof a contact metal, there may occur a problem that devicecharacteristics may be degraded by the thermal alloying process.

In view of the foregoing, an alloying process using laser irradiationhas been proposed, for example, in Japanese Patent Laid-open No. Sho57-72322. The alloying process using laser irradiation, which allowslocal heating, is expected to extend the application range and reducedegradation of the performance of a semiconductor device. The alloyingprocess using laser irradiation, however, has problems that theirradiation of a laser beam having a high energy may cause abrasion ofthe surface of a metal and a semiconductor and damage the innerstructure of a device, and that the irradiation of a laser beam having ahigh energy required for alloying limits an irradiation area, to reducethe throughput, thereby increasing the production cost.

SUMMARY OF THE INVENTION

An object of the present invention is to provide an alloying methodcapable of readily alloying only a necessary portion so as to convertthe necessary portion into an ohmic contact without degradingcharacteristics of the semiconductor device.

Another object of the present invention is to provide an alloying methodcapable of selectively alloying only a necessary portion, therebyimproving the efficiency of the alloying step.

A further object of the present invention is to provide a method capableof forming desirable wiring portions, a method of forming desirabledisplay devices, and a method of fabricating a desirable image displayunit, each of which uses the alloying method.

To achieve the above objects, according to a first aspect of the presentinvention, there is provided an alloying method including the steps of:forming a metal layer on a semiconductor having been transferred to amaterial having a low thermal conductivity; and alloying an interfacebetween the semiconductor and the metal layer by irradiating theinterface between the semiconductor and the metal layer with a laserbeam having a wavelength absorbable in at least one of the semiconductorand the metal layer.

The alloying method of the present invention is performed by irradiatingan interface between a semiconductor and a metal layer with a laser beamhaving a wavelength absorbable in either the semiconductor or the metallayer, whereby the interface absorbing the laser beam is heated to bealloyed. In the alloying process using laser irradiation, the entiresemiconductor is not heated, but only a portion required to be alloyed(only the outermost surface of the semiconductor) is locally heated.With respect to such an alloying method using laser irradiation,according to the present invention, the semiconductor is previouslytransferred to a material having a low thermal conductivity, forexample, into a resin and a metal layer is formed on the semiconductor,and then an interface between the semiconductor and the metal layer isirradiated with a laser beam, to be thus alloyed. Accordingly, thediffusion of heat caused by laser irradiation becomes slow, and therebythe substantial heating time becomes very long. The longer the heatingtime, the lower the alloying temperature. As a result, it is possible toset the irradiation energy of a laser beam to a low value and hence toeliminate abrasion of the surface of a metal and a semiconductor andalso eliminate damaging of the inner structure of the semiconductor, andfurther to improve the throughput by increasing the irradiation area andhence to significantly reduce the production cost.

According to a second aspect of the present invention, there is provideda wiring forming method including the steps of: transferring asemiconductor device having been formed on a semiconductor substrate toa material having a low thermal conductivity, and removing thesemiconductor substrate from the semiconductor device; forming, as awiring portion, a metal layer being in contact with the semiconductordevice; and alloying an interface between the semiconductor device andthe wiring portion by irradiating the interface between thesemiconductor device and the wiring portion with a laser beam having awavelength absorbable in at least one of the semiconductor device andthe wiring portion.

With this configuration, it is possible to form a desirable ohmiccontact to a semiconductor device without damaging the semiconductordevice.

According to a third aspect of the present invention, there is provideda method of forming a display device, including the steps of: forming,after a light emitting device made from a semiconductor is buried in aresin, an electrode composed of a metal layer on the surface of theresin; and alloying an interface between the light emitting device andthe electrode by irradiating the interface between the light emittingdevice and the electrode with a laser beam having a wavelengthabsorbable in at least one of the semiconductor and the electrode.

With this configuration, since a desirable ohmic contact can be formedbetween a device and an electrode without damaging the device, it ispossible to provide a display device having an excellent performance.

According to a fourth aspect of the present invention, there is provideda method of fabricating an image display unit in which display devicesin the form of chips obtained by burying light emitting devices in aresin are arrayed in a matrix, the method including: a first transferstep of transferring light emitting devices having been arrayed on afirst substrate to a temporarily holding member and holding the lightemitting devices thereon in a state that the light emitting devices areenlargedly spaced from each other with a pitch larger than an arraypitch of the light emitting devices on the first substrate; a secondtransfer step of transferring the light emitting devices having beenheld on the temporarily holding member to a second substrate in a statethat the light emitting devices are more enlargedly spaced from eachother with a pitch larger than the array pitch of the light emittingdevices on the temporarily holding member; and a wiring forming step offorming a wiring portion connected to each of the light emittingdevices; wherein the method further includes: an electrode forming stepof forming, after each of the light emitting devices made from asemiconductor is buried in a resin, an electrode composed of a metallayer on the surface of the resin; and an alloying step of alloying aninterface between the light emitting device and the electrode byirradiating the interface between the light emitting device and theelectrode with a laser beam having a wavelength absorbable in at leastone of the semiconductor and the electrode.

With this configuration, since a desirable ohmic contact can be formedbetween a device and an electrode without damaging the device, it ispossible to provide an image display unit having an excellentperformance.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features and advantages of the present invention will be apparentfrom the following description taken in conjunction with theaccompanying drawings wherein:

FIG. 1 is a schematic sectional view showing one structure example of amicro LED;

FIGS. 2A to 2D are schematic sectional views showing one example of aprocess of forming electrodes on the micro LED, wherein FIG. 2A shows ap-electrode forming step, FIG. 2B shows a laser abrasion step, FIG. 2Cshows an n-electrode forming step, and FIG. 2D shows an alloying step;

FIG. 3 is a characteristic diagram showing a change in heatingtemperature with elapsed time at the time of pulse laser irradiationbefore removal of a GaAs substrate;

FIG. 4 is a characteristic diagram showing a change in heatingtemperature with elapsed time at the time of pulse laser irradiationafter transfer of the device to an adhesive layer;

FIG. 5 is a characteristic diagram showing a relationship between theirradiation energy of an YAG laser beam and a contact resistance;

FIG. 6 is a characteristic diagram showing a relationship between thenumber of shots of irradiation of the YAG laser beam and a contactresistance;

FIG. 7 is a photograph showing the result of Nomarski observation afterlaser irradiation for evaluating the resistance of a contact alloyed bylaser irradiation;

FIG. 8 is a photograph showing the result of observation by transmittedlight from the back surface side after laser irradiation for evaluatingthe resistance of a contact alloyed by laser irradiation;

FIG. 9 is a schematic sectional view showing one example of asemiconductor device having a low temperature growth layer;

FIG. 10 is a sectional view showing one example in which portions, to bealloyed, of a metal layer is patterned by selective laser irradiation;

FIGS. 11A to 11D are typical views showing a method of arraying devices;

FIG. 12 is a schematic perspective view of a resin-covered chip;

FIG. 13 is a schematic plan view of the resin-covered chip;

FIGS. 14A and 14B are a sectional view and a plan view showing oneexample of a light emitting device, respectively;

FIG. 15 is a schematic sectional view showing a first temporarilyholding member joining step;

FIG. 16 is a schematic sectional view showing an UV-adhesive curingstep;

FIG. 17 is a schematic sectional view showing a laser abrasion step;

FIG. 18 is a schematic sectional view showing a first substrateseparating step;

FIG. 19 is a schematic sectional view showing a Ga removing step;

FIG. 20 is a schematic sectional view showing a device isolation grooveforming step;

FIG. 21 is a schematic sectional view showing a second temporarilyholding member joining step;

FIG. 22 is a schematic sectional view showing a selective laserabrasion/UV-exposure step;

FIG. 23 is a schematic sectional view showing a light emitting diodeselectively separating step:

FIG. 24 is a schematic sectional view showing a burying step for buryingthe device in a resin;

FIG. 25 is a schematic sectional view showing a resin layer thicknessreducing step;

FIG. 26 is a schematic sectional view showing a via-hole forming step;

FIG. 27 is a schematic sectional view showing an anode side electrodepad forming step;

FIG. 28 is a schematic sectional view showing a laser abrasion step;

FIG. 29 is a schematic sectional view showing a second temporarilyholding member separating step;

FIG. 30 is a schematic sectional view showing an exposure step forexposing a semiconductor layer to be connected to an electrode pad;

FIG. 31 is a schematic sectional view showing a cathode side electrodepad forming step;

FIG. 32 is a schematic sectional view showing a laser dicing step;

FIG. 33 is a schematic sectional view showing a pick-up step forselectively picking up the devices by an attracting device;

FIG. 34 is a schematic sectional view showing one example of theattracting device provided with a device position displacementpreventing means;

FIG. 35 is a schematic sectional view showing a transfer step oftransferring the device to a second substrate;

FIG. 36 is a schematic sectional view showing a transfer step oftransferring another kind of light emitting diode to the secondsubstrate;

FIG. 37 is a schematic sectional view showing an insulating layerforming step;

FIG. 38 is a schematic sectional view showing a wiring forming step; and

FIG. 39 is a schematic sectional view showing a final step of forming aprotective layer and a black mask.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, an alloying method, a wiring forming method, a displaydevice forming method, and an image display unit fabricating methodaccording to the present invention will be described with reference tothe drawings.

Embodiments of the alloying method and the wiring forming methodaccording to the present invention will be first described. In theseembodiments, an electrode is alloyed with a micro LED representative ofa semiconductor device by using the alloying method of the presentinvention.

As shown in FIG. 1, a micro LED 1 is composed of an n-cladding layer 1a, an active layer 1 b, and a p-cladding layer 1 c, wherein ann-electrode 2 is connected to the n-cladding layer 1 a and a p-electrode3 is connected to the p-cladding layer 1 c.

In general, the n-electrode 2 and the p-electrode 3 are formed, as shownin FIG. 1, by forming an insulating layer 5 so as to cover the micro LED1 on a GaAs substrate 4, and providing openings in portions,corresponding to the n-cladding layer 1 a and the p-cladding layer 1 c,of the insulating layer 5, forming metal layers such that the metallayers are connected to the n-cladding layer 1 a and the p-claddinglayer 1 c through the openings, and patterning the metal layers into then-electrode 2 and the p-electrode 3.

In the case of extracting both the n-electrode 2 and the p-electrode 3on the same surface side as described above, however, the metal layersmust be patterned at a high accuracy. Accordingly, in this embodiment,as will be described below, there is adopted a structure that then-electrode 2 and the p-electrode 3 are extracted on the opposed surfacesides of the micro LED 1 in order to simplify the patterning of metallayers into the n-electrode 2 and the p-electrode 3.

The formation of such electrodes (n-electrode 2 and the p-electrode 3)on the opposed surface sides of the micro LED 1 and the process ofalloying the electrodes with the micro LED 1 will be described withreference to FIGS. 2A to 2D.

As shown in FIG. 2A, the insulating layer 5 is formed so as to cover themicro LED 1 on the GaAs substrate 4. An opening is formed in a portion,corresponding to the p-cladding layer 1 c, of the insulating layer 5,and a metal layer is formed on the insulating layer 5 so as to beconnected to the p-cladding layer 1 c through the opening. The metallayer is then patterned into the p-electrode 3 as shown in the figure.In this case, since the metal layer formed on one side of the micro LED1 is patterned only into the p-electrode 3, it is not required topattern the metal layer at a high accuracy.

A portion, being connected to the micro LED 1 (particularly, thep-cladding layer 1 c), of the p-electrode 3 is required to be convertedinto an ohmic contact to the micro LED 1.

In this embodiment, such conversion of the portion of the p-electrode 3into an ohmic contact to the micro LED 1 is performed by the alloyingmethod using laser irradiation according to the present invention.

According to the alloying method using laser irradiation, only aspecific region at which a portion of the p-electrode 3 is in contactwith the p-cladding layer 1 c is irradiated with laser beams, to beheated. At this time, the laser beams used to irradiate the abovespecific region are specified to have a wavelength absorbable in a metalforming the p-electrode 3 and/or the p-cladding layer 1 c. With thisconfiguration, only the specific region irradiated with the laser beamsis heated to be alloyed.

After the portion of the p-electrode 3 is converted into the ohmiccontact to the p-cladding layer 1 c by the alloying method, as shown inFIG. 2B, a transfer substrate 7 provided with an adhesive layer 6 madefrom a material having a low thermal conductivity is overlapped to themicro LED 1 side of the GaAs substrate 4, and the GaAs substrate 4 ispeeled from the micro LED 1 by laser abrasion caused by laserirradiation from the back side of the GaAs substrate 4, whereby themicro LED 1 is transferred to the transfer substrate 7. The transfersubstrate 7 may be made from sapphire. The material having a low thermalconductivity may be selected from a resin such as an epoxy based resin,an ultraviolet ray curing resin, or a silicon resin, and a metal such asamorphous silicon.

After the micro LED 1 is transferred to the transfer substrate 7, asshown in FIG. 2C, a metal layer is formed on the back surface of themicro LED 1 and is patterned into the n-electrode 2. The metal layer canbe formed by vapor deposition; however, since the micro LED 1 issurrounded by the adhesive layer 6 and the insulating layer 5, then-electrode 2 patterned from the metal layer cannot be alloyed with themicro LED 1 by using an ordinary thermal alloying method which isperformed by heating the entire structure at a temperature of about 420°C. Accordingly, as shown in FIG. 2D, only a region at which a portion ofthe n-electrode 2 is in contact with the n-cladding layer 1 a isirradiated with laser beams having a wavelength absorbable in at leastone of the n-electrode 2 and the n-cladding layer 1 a, to be thusheated, whereby the portion of the n-electrode 2 is alloyed with then-cladding layer 1 a, to be converted into an ohmic contact to then-cladding layer 1 a.

As described above, according to this embodiment, after a semiconductorsubstrate (GaAs substrate 4) having a high thermal conductivity isremoved and only a necessary semiconductor device portion is transferredto a layer made from a material having a low thermal conductivity suchas a resin (adhesive layer 6), only a region at which an electrode is incontact with the semiconductor device is irradiated with laser beams, tobe alloyed. In this case, since the diffusion of heat caused by laserirradiation becomes slow, the heating time becomes substantially verylonger. The longer the heating time, the lower the alloying temperature.This is advantageous in reducing the energy of the laser beams requiredfor laser irradiation. The reduction of the energy of the laser beamsrequired for laser irradiation makes it possible to eliminate abrasionof the surface of a metal and a semiconductor constituting thesemiconductor device and also eliminate damaging of the inner structureof the semiconductor device, and also to easily increase an irradiatedarea and hence to reduce the production cost by, for example, increasingthe throughput.

Concretely, in the case of alloying an electrode with a semiconductordevice in a state being fixed to a semiconductor substrate, a laserenergy in a range of about 200 to 400 mJ/cm² is required, whereas in thecase of alloying an electrode with a semiconductor device in a stateafter being transferred to a resin layer such as the adhesive layer 6,only a laser energy of about 20 to 100 mJ/cm² is required. To be morespecific, in the latter case, the electrode can be alloyed with thesemiconductor device to be converted into an ohmic contact to thesemiconductor device by laser beams having a laser energy of about 20 to100 mL/cm².

FIG. 3 is a diagram showing a change in heating temperature with elapsedtime in the case of irradiating the micro LED 1 with pulse laser beams,for example, pulse YAG laser beams (irradiation energy: 300 mJ/cm²)before the GaAs substrate 4 is removed from the micro LED 1 by laserabrasion. As shown in this figure, in the state that the GaAs substrate4 is present, the heating time is as small as about several 10nanoseconds.

FIG. 4 is a diagram showing a change in heating temperature with elapsedtime in the case of irradiating the micro LED 1 with pulse laser beams,for example, pulse YAG laser beams (irradiation energy: 100 mJ/cm²)after the micro LED 1 is transferred to the adhesive layer 6. As shownin this figure, in the state that the GaAs substrate 4 is not present,the substantial irradiation time becomes as long as about severalmicroseconds.

As described above, to alloy a contact metal (electrode) with asemiconductor device by laser irradiation, the setting of the energy oflaser beams used for laser irradiation becomes important. For example,in the case of alloying a contact metal with an n-GaAs layer formed on aGaAs substrate by irradiation of YAG laser beams (wavelength: 532 nm),when the laser irradiation is performed by one shot of the YAG laserbeams, as shown in FIG. 5, the contact resistance (R_(contact)) isminimized at an irradiation energy of about 350 mJ/cm², while when thelaser irradiation is performed by five or more shots of the YAG laserbeams, as shown in FIG. 6, the contact resistance at each of theirradiation energies 200, 250, and 300 mJ/cm² is substantially reducedto the same level. It is to be noted that the five or more shots ofirradiation may cause a problem associated with damaging of the contactmetal.

Table 1 shows changes in contact resistance, metal damage, and GaAsdamage depending on the power (irradiation energy) of the YAG laserbeams and the number of shots of irradiation. The irradiation energy of300 mJ/cm² is a level immediately before occurrence of abrasion. That isto say, if the irradiation energy is 300 mL/cm² or more, the GaAs damageoccurs even by one shot of irradiation. Meanwhile, if the irradiationenergy is set to be equal to or less than 250 mJ/cm², the contactresistance becomes insufficient unless the laser irradiation is repeatedby five or more shots. As a result, it becomes apparent that in the caseof alloying the contact metal with the n-GaAs layer formed on the GaAssubstrate, there is no condition in which all of the contact resistance,the metal damage, and the GaAs damage become desirable. It is to benoted that the desirable result is shown by a mark ◯ in Table 1.

TABLE 1 Contact Resistance Metal Damage GaAs Damage 1 shot 5 shots 10shots 1 shot 5 shots 10 shots 1 shot 5 shots 10 shots 200 mJ/cm² X ◯ ◯ ◯X X ◯ ◯ ◯ 250 mJ/cm² Δ ◯ ◯ ◯ X X ◯ ◯ ◯ 300 mJ/cm² ◯ ◯ ◯ ◯ X X Δ Δ Δ 350mJ/cm² ◯ — — ◯ — — X — — 400 mJ/cm² ◯ — — Δ — — X — — 450 mJ/cm² Δ — — X— — X — —

On the contrary, in the case of removing the GaAs substrate by laserabrasion and transferring the semiconductor device to a resin layer, andthen alloying the contact metal with the semiconductor device byirradiation of the YAG laser beams, there is a condition in which all ofthe contact resistance, the metal damage, and the GaAs damage becomedesirable.

FIGS. 7 and 8 are photographs each showing the result of a testperformed by forming an n-contact metal to a semiconductor device fromwhich a GaAs substrate has been removed and alloying the n-contact metalwith the semiconductor device by irradiation of YAG laser beams.

In this test, the boundary between the n-contact metal and thesemiconductor device was irradiated with YAG laser beams having anirradiation energy ranging from 188 mJ/cm² (E) to 29 mJ/cm² (I) under acondition with a wavelength of 532 nm, a magnification of an UV lens(blue) of ×20, a frequency of 10 Hz, and an irradiation area of 150μm×150 μm. In addition, a damage portion in the left half of eachirradiation region shown in each of FIGS. 7 and 8 was etched after laserirradiation.

As is apparent from FIGS. 7 and 8, in the case of alloying a contactmetal with a semiconductor device from a GaAs substrate has beenremoved, it is possible to obtain a stable ohmic contact with lessdamage by irradiation of one shot of YAG laser beams having anirradiation energy of 100 to 150 mJ/cm², or by irradiation of three tofive shots of YAG laser beams having an irradiation energy of 29 mJ/cm².

The above-described alloying method using laser irradiation isparticularly effective to alloy a contact metal (electrode) to asemiconductor device having a low temperature growth layer formed byepitaxial growth at a low epitaxial temperature. FIG. 9 shows asemiconductor device having a structure that a first epitaxial growthlayer 12 (epitaxial temperature: 500° C.), a second epitaxial growthlayer 13 (epitaxial temperature: 400° C.), a third epitaxial growthlayer 14 (epitaxial temperature: 550° C.), and a fourth epitaxial growthlayer 15 (epitaxial temperature; 520° C.) are stacked in this order on asubstrate 11. For this semiconductor device, since the epitaxialtemperature of the second epitaxial growth layer 13 is as low as 400°C., it is impossible to thermally alloy a metal layer 16, which isformed as an electrode layer on the fourth epitaxial growth layer 15,with the epitaxial growth layer 15 at a temperature more than 400° C.,for example, 420° C.; however, according to the alloying method usinglaser irradiation, since only the outermost surface of the semiconductordevice, that is, the surface of the fourth epitaxial growth layer 15 isheated by laser irradiation, the metal layer 16 can be alloyed with thefourth epitaxial growth layer 15 without damaging the other layers,particularly, the second epitaxial growth layer 13.

According to the alloying method using laser irradiation, only aportion, being in contact with a semiconductor device, of a metal layerformed as an electrode layer can be selectively alloyed with thesemiconductor device, to be thus converted into an ohmic contact to thesemiconductor device. In other words, the portions, to be alloyed, ofthe metal layer can be patterned by selective laser irradiation.

FIG. 10 shows one example in which portions, to be alloyed, of a metallayer is patterned by selective laser irradiation.

In a general wiring forming process, it is required to form a patternedcontact metal on a semiconductor device, thermally alloy the contactmetal with the semiconductor device, and form an insulating layer and awiring pattern.

On the contrary, according to the alloying method using laserirradiation, as shown in FIG. 10, a metal layer 22 for forming a contactmetal serving as a wiring metal is formed overall on the surface of asemiconductor device 21, and regions 22 a to be converted into ohmiccontacts are irradiated with laser beams to be alloyed with thesemiconductor device 21. As a result, only the irradiated regions 22 abecome ohmic contacts allowing the flow of a current therethrough. Thepatterning of portions, to be alloyed, of a metal layer by selectivelaser irradiation is effective to reduce the number of steps as comparedwith the ordinary wiring forming process, and hence to reduce theproduction cost.

The above-described alloying method and wiring forming method can beapplied to the display device forming method of the present inventionperformed by burying light emitting devices in a resin, to formresin-covered chips, and then forming electrodes on the surface of theresin of each of the resin-covered chips.

The display device forming method, and the image display unitfabricating method of the present invention using the display deviceforming method will be hereinafter described in detail.

In the case of an image display unit using, for example, light emittingdiodes, the light emitting diodes are required to be arranged in such amanner as to be enlargedly spaced from each other. Various methods ofarraying the light emitting diodes in such a manner that the devices areenlarged spaced from each other have been known, and in this embodiment,the image display unit fabricating method of the present invention willbe described by example a so-called two-step enlarged transfer method.

The two-step enlarged transfer method is carried out by transferringdevices, which are previously formed on a first substrate at a highdensity, to a temporarily holding member in such a manner that thedevices are enlarged spaced from each other with a pitch larger than apitch of the devices arrayed on the first substrate, and furthertransferring the devices held on the temporarily holding member to asecond substrate in such a manner that the devices are enlargedly spacedfrom each other with a pitch larger than the pitch of the devices heldon the temporarily holding member. Although two-step transfer is adoptedin this embodiment, multi-step transfer such as three or more-steptransfer can be adopted in accordance with a required enlargement ratiobetween the pitch of the devices arrayed on the first substrate and thepitch of the devices mounted on the second substrate.

FIGS. 11A to 11D are views showing basic steps of the two-step enlargedtransfer method. As shown in FIG. 11A, devices 32 such as light emittingdevices are densely formed on a first substrate 30. By densely formingdevices on a substrate, the number of the devices formed per eachsubstrate can be increased, to reduce a production cost of a finalproduct using the devices. The first substrate 30 may be selected fromvarious substrates on each of which devices can be formed, for example,a semiconductor wafer, a glass substrate, a quartz glass substrate, asapphire substrate, and a plastic substrate. The devices 32 may bedirectly formed on the first substrate 30, or may be formed once onanother substrate and then transferred and arrayed on the firstsubstrate 30.

As shown in FIG. 11B, the devices 32 are transferred from the firstsubstrate 30 to a temporarily holding member 31 shown by a broken linein the figure and held thereon. On the temporarily holding member 31,the adjacent two of the devices 32 are enlargedly spaced from each otherso that the devices 32 are arrayed in a matrix as shown in the figure.More specifically, the devices 32 are transferred to the temporarilyholding member 31 in such a manner as to be enlargedly spaced from eachother not only in the x-direction but also in the y-directionperpendicular to the x-direction. The enlarged distance between theadjacent two of the devices 32 is not particularly limited, but may beset, for example, in consideration of formation of a resin portioncovering each of the devices 32 and also formation of electrode pads oneach resin portion in the subsequent steps. The devices 32 on the firstsubstrate 30 can be all transferred from the first substrate 30 to thetemporarily holding member 31 in such a manner as to be enlargedlyspaced from each other. In this case, the size of the temporarilyholding member 31 in each of the x-direction and the y-direction may beequal to or more than a value obtained by multiplying the enlargeddistance by the number of those, arrayed in each of the x-direction andthe y-direction, of the devices 32 arrayed in the matrix on thetemporarily holding member 31. Alternatively, part of the devices 32 onthe first substrate 30 may be transferred to the temporarily holdingmember 31 in such a manner as to be enlargedly spaced from each other.

After such a first transfer step, as shown in FIG. 11C, each of thedevices 32 enlargedly spaced from each other on the temporarily holdingmember 31 is covered with a resin, and electrode pads are formed on theresin covering the device 32. The reason why each device 32 is coveredwith the resin is to facilitate the formation of the electrode pads forthe device 32 and to facilitate the handling of the device 32 in thesubsequent second transfer step. To prevent occurrence of a wiringfailure in a final wiring step performed after the second transfer step(which will be described later), the electrode pads are formed intorelatively large sizes. It is to be noted that the electrode pads arenot shown in FIG. 11C.

The enlarged partial view in FIG. 11C shows a resin-covered chip 34 thusformed by covering each of the devices 32 with a resin 33. As seen fromtop, the device 32 is located at an approximately central portion of theresin-covered chip 34; however, the device 32 may be located at aposition offset to one side or a corner of the resin-covered chip 34.

As shown in FIG. 11D, a second transfer step is carried out, in whichthe devices 32 arrayed in the matrix on the temporarily holding member31 in the form of the resin-covered chips 34 are transferred to a secondsubstrate 35 in such a manner as to be more enlargedly spaced from eachother. Even in the second transfer step, adjacent two of the devices 32in the form of the resin-covered chips 34 are enlargedly spaced fromeach other so that the devices 32 are arrayed in a matrix shown in thefigure. More specifically, the devices 32 are transferred in such amanner as to be enlargedly spaced from each other not only in thex-direction but also in the y-direction perpendicular to thex-direction. If positions of the devices 32 arrayed on the secondsubstrate 35 in the second transfer step correspond to positions ofpixels of a final product such as an image display unit, a pitch of thedevices 32 arrayed on the second substrate 35 in the second transferstep becomes about integer times an original pitch of the devices 32arrayed on the first substrate 30. Assuming that an enlargement ratio ofthe pitch of the devices 32 held on the temporarily holding member 31 tothe pitch of the devices 32 arrayed on the first substrate 30 is takenas “n” and an enlargement ratio of the pitch of the devices 32 arrayedon the second substrate 35 to the pitch of the devices 32 held on thetemporarily holding member 31 is taken as “m”, a value F of theabove-described about integer times is expressed by E=n×m.

The devices 32 in the form of the resin-covered chips 34, which areenlargedly spaced from each other on the second substrate 35, are thensubjected to a wiring work. The wiring work is performed with care takennot to cause a connection failure by making use of the previously formedelectrode pads and the like. If the devices 32 are light emittingdevices such as light emitting diodes, the wiring work includes wiringto p-electrodes and n-electrodes.

In the above-described two-step enlarged transfer method shown in FIGS.11A to 11D, each device 32 is covered with the resin and electrode padsare formed on the resin covering the device 32 by making use of theenlarged distance between adjacent two of the devices 32 after the firsttransfer, and wiring can be performed after the second transfer whilesuppressing the occurrence of a connection failure as much as possibleby making use of the previously formed electrode pads and the like. As aresult, it is possible to improve a production yield of an image displayunit.

The two-step enlarged transfer method according to this embodiment,which includes the two enlarged transfer steps in each of which devicesare enlargedly spaced from each other, has the following advantage:namely, by performing a plurality of such enlarged transfer steps ineach of which devices are enlargedly spaced from each other, the numberof transfer can be actually reduced.

It is now assumed that an enlargement ratio of the pitch of the devices32 on the temporarily holding member 31 to the pitch of the devices 32on the first substrate 30 is taken as 2 (n=2) and an enlargement ratioof the pitch of the devices 32 on the second substrate 35 and the pitchof the devices 32 on the temporarily holding member 31 is taken as 2(m=2). In this case, the total enlargement ratio becomes 2×2=4. Torealize the total enlargement ratio (=4), according to a one-stepenlarged transfer method, the number of transfer (alignment) of thedevices 32 from the first substrate 30 to the second substrate 35becomes 16 (=4²) times. On the contrary, to realize the same totalenlargement ratio (=4), according to the two-step enlarged transfermethod in this embodiment, the number of transfer (alignment) of thedevices 32 from the first substrate 30 to the second substrate 35 isdetermined by simply adding the square of the enlargement ratio (=2) inthe first transfer step, that is, 4 (=2²) times to the square of theenlargement ratio (=2) in the second transfer step, that is, 4 (=2²)times, and therefore, the number of transfer becomes 8 (=4+4) times. Tobe more specific, according to the two-step step enlarged transfermethod, to achieve the total enlargement ratio (transfer magnification)of n×m, the total number of transfer becomes (n²+m²) times, whereasaccording to the one-step enlarged transfer method, to achieve the sametotal enlargement ratio (transfer magnification) of n×m, the number oftransfer becomes (n+m)²=n²+2 nm+m². As a result, according to thetwo-step enlarged transfer method, the number of transfer can be madesmaller than that according to the one-step enlarged transfer method by2 nm times, thereby correspondingly saving the time and cost requiredfor the production step. This becomes more significant as the totalenlargement ratio becomes large.

In the two-step enlarged transfer method shown in FIGS. 11A to 11D, thedevice 32 is exemplified by a light emitting device; however, thepresent invention is not limited thereto. For example, the device 32 maybe selected from a liquid crystal control device, a photoelectrictransfer device, a piezoelectric device, a thin film transistor device,a thin film diode device, a resistance device, a switching device, amicro-magnetic device, and a micro-optical device, or be part of each ofthese devices or a combination of these devices.

In the above-described second transfer step, each light emitting deviceis handled in the form of a resin-covered chip, and is transferred fromthe temporarily holding member to the second substrate. Such aresin-covered chip will be described in detail with reference to FIGS.10 and 11.

The resin-covered chip 34 is formed, as described above, by coveringeach of the light emitting devices 32 enlargedly spaced from each otherwith the resin 33, and in the second transfer step, the light emittingdevices 32 are transferred in the form of the resin-covered chips 34from the temporarily holding member to the second substrate. Theresin-covered chip 34 is formed into an approximately flat plate shapehaving an approximately square principal plane. The shape of theresin-covered chip 34 is the shape of the resin 33 covering the lightemitting device 32. More specifically, the resin-covered chips 34 areobtained by coating the overall surface of the temporarily holdingmember 31 so as to cover the devices 32 with a non-cured resin, curingthe resin, and cutting edges of the cured resin 33 into square chips bydicing.

Electrode pads 36 and 37 are formed on front and back surfaces of theapproximately flat plate shaped resin 33, respectively. These electrodepads 36 and 37 are each produced by forming a conductive layer made froma metal or polysilicon as a material for forming each of the electrodepads 36 and 37 overall on each of the front and back surfaces of theresin 33, and patterning the conductive layer into a specific electrodeshape by photolithography. The electrode pads 36 and 37 are formed so asto be connected to a p-electrode and an n-electrode of the lightemitting device 32, respectively. In this case, via-holes and the likemay be formed in the resin 33 as needed. Since the wiring is formed onthe electrode pads 36 and 37, the resin 33 is heated under a reducedpressure to sufficiently degas moisture or the like before the formationof the electrode pads 36 and 37.

In this embodiment, the electrode pads 36 and 37 are formed on the frontand back surfaces of the resin-covered chip 34, respectively; however,they may be formed on either of the front and back surfaces of theresin-covered chip 34. Further, if the device is exemplified by a thinfilm transistor, since it has three electrodes, that is, a source, agate, and a drain, three or more electrode pads may be formed. Thereason why the electrode pads 36 and 37 are offset from each other inthe horizontal direction is to prevent the electrode pads 36 and 37 frombeing overlapped to each other even in the case of forming a contacthole from above at the time of formation of final wiring. The shape ofeach of the electrode pads 36 and 37 is not limited to a square shapebut may be any other shape.

The formation of such a resin-covered chip 34 is advantageous in thatsince the device 32 is covered with the flattened resin 33, theelectrode pads 36 and 37 can be accurately formed on the flattened frontand back surfaces of the resin 33, and the electrode pads 36 and 37 canbe formed so as to extend to a region wider than the size of the device32, thereby facilitating the handling of the device 32 at the time oftransfer by an attracting jig in the second transfer step. As will bedescribed later, since final wiring is performed after the secondtransfer step, a wiring failure can be prevented by performing wiringusing the electrode pads 36 and 37 having relatively large sizes.

FIGS. 14A and 14B are a sectional view and a plan view of the structureof a light emitting device as one example of the device used for thetwo-step enlarged transfer method according to this embodiment,respectively.

The light emitting device is configured as a GaN based light emittingdiode formed, for example, on a sapphire substrate by crystal growth.Such a GaN based light emitting diode has a feature that it can beeasily separated from the sapphire substrate by laser irradiation. To bemore specific, when an interface between the sapphire substrate and aGaN based crystal growth layer is irradiated with laser beams passingthrough the substrate, laser abrasion occurs at the interface, to causepeeling of the film at the interface due to vaporization of nitrogen (N)of GaN.

The structure of the GaN based light emitting diode will be describedbelow. A hexagonal pyramid shaped GaN layer 42 is formed by selectivegrowth on an underlying growth layer 41 made from a GaN basedsemiconductor. More specifically, an insulating film (not shown) isformed on the underlying growth layer 41, an opening is formed in theinsulating layer, and the hexagonal pyramid shaped GaN layer 42 isformed by selective growth from the opening by, for example, an MOCVDprocess. The GaN layer 42 is doped with silicon, and if a C-plane ofsapphire is used as a principal plane of the sapphire substrate used forcrystal growth, the GaN layer 42 is grown into a pyramid shape coveredwith an S-plane (1-101) plane. The tilt S-plane portion of the GaN layer42 functions as a cladding layer of a double-hetero structure. An InGaNlayer 43 as an active layer is formed so as to cover the tilt S-plane ofthe GaN layer 42, and a magnesium-doped GaN layer 44 is formed on theInGaN layer 43. The magnesium-doped GaN layer 44 also functions as acladding layer.

A p-electrode 45 and an n-electrode 46 are formed on such a lightemitting diode. The p-electrode 45 is formed by vapor-depositing a metalmaterial such as Ni/Pt/Au or Ni(Pd)/Pt/Au on the magnesium-doped GaNlayer 44. The n-electrode 46 is formed by vapor-depositing a metalmaterial such as Ti/Al/Pt/Au in the opening formed in theabove-described insulating film (not shown). It is to be noted that ifn-electrode extraction is performed from the back side of the underlyinggrowth layer 41, the n-electrode 46 is not required to be formed on thefront side of the underlying growth layer 41.

The GaN based light emitting diode having such a structure allows evenemission of light of blue, and particularly, it can be relatively simplypeeled from the sapphire substrate by laser abrasion, and therefore, canbe selectively peeled from the sapphire substrate by selectiveirradiation of a laser beam. The GaN based light emitting diode may havea structure that an active layer be formed in a flat shape or a bandshape, or may have a pyramid shaped structure that a C-plane is formedon an upper end portion. The light emitting device is not limited to theabove-described GaN based light emitting diode but may be anothernitride based light emitting device or a compound semiconductor device.

A concrete method of fabricating an image display unit using thetwo-step enlarged transfer method shown in FIGS. 11A to 11D will bedescribed below. In addition, the GaN based light emitting diodes shownin FIGS. 14A and 14B are used as light emitting devices for the imagedisplay unit.

First, as shown in FIG. 15, a plurality of light emitting diodes 52 aredensely formed on a principal plane of a first substrate 51. A size ofthe light emitting diode 52 is set to a value being as small aspossible, for example, about 20 μm for one side. The first substrate 51,which is made from a material having a high transmittance for awavelength of a laser beam used to irradiate the light emitting diode52, is typically configured as a sapphire substrate. The light emittingdiode 52 is already provided with a p-electrode and the like but is notsubjected to final wiring. Device isolation grooves 52 g are formed, tomake the light emitting diodes 52 isolatable from each other. Thegrooves 52 g are formed, for example, by reactive ion etching.

The light emitting diodes 52 on the first substrate 51 are thentransferred to a first temporarily holding member 53. The firsttemporarily holding member 53 may be selected from a glass substrate, aquartz glass substrate, and a plastic substrate. In this embodiment, thequartz glass substrate used. A peelable layer 54 functioning as arelease layer is formed on the surface of the first temporarily holdingmember 53. The peelable layer 54 may be made from a fluorine coatmaterial, a silicone resin, a water soluble adhesive (for example,polyvinyl alcohol: PVA), or polyimide. In this embodiment, the peelablelayer 54 is made from polyimide.

Upon transfer, as shown in FIG. 15, the surface of the first substrate51 is coated with an adhesive (for example, ultraviolet (UV)-curing typeadhesive) 55 in an amount large enough to cover the light emittingdiodes 52, and then the first temporarily holding member 53 isoverlapped to the first substrate 51 in such a manner as to be supportedby the light emitting diodes 52. In such a state, the adhesive 55 isirradiated with ultraviolet rays (UV) from the back side of the firsttemporarily holding member 53, to be cured. The first temporarilyholding member 53, which is made from quartz glass, allows ultravioletrays to pass therethrough, so that the adhesive 55 can be readily curedby irradiation of the ultraviolet rays having passed through the firsttemporarily holding member 53.

At this time, since the first temporarily holding member 53 is supportedby the light emitting diodes 52, the gap between the first substrate 51and the first temporarily holding member 53 is determined by the heightof the light emitting diodes 52. Accordingly, in the case of curing theadhesive 55 in the state that the first temporarily holding member 53 isoverlapped to the first substrate 51 in such a manner as to be supportedby the light emitting diodes 52, the thickness, denoted by character“t”, of the adhesive 55 is limited by the gap between the firstsubstrate 51 and the first temporarily holding member 53, that is, theheight of the light emitting diodes 52. In other words, the lightemitting diodes 52 on the first substrate 51 function as a spacer toallow the formation of the adhesive layer having a specific thicknessbetween the first substrate 51 and the first temporarily holding member53. In this way, according to the adhesive layer forming method in thisembodiment, since the thickness of an adhesive layer is determined bythe height of the light emitting diodes 52, it is possible to form theadhesive layer having a specific thickness without strictly controllingthe pressure applied thereto.

After the adhesive 55 is cured, as shown in FIG. 17, the light emittingdiodes 52 are irradiated with laser beams from the back side of thefirst substrate 51, to be peeled from the first substrate 51 by makinguse of laser abrasion. Since the GaN based light emitting diode 52 isdecomposed into gallium (Ga) and nitrogen at an interface between theGaN layer and sapphire, the light emitting diode 52 can be relativelysimply peeled from the first substrate 51 made from sapphire. The laserbeam used to irradiate the light emitting diode 52 may be selected froman excimer laser beam, a harmonic YAG laser beam, and the like. Thelight emitting diodes 52, each of which has been peeled from the firstsubstrate 51 at the interface between the GaN layer and the firstsubstrate 51 by laser abrasion, are then transferred to the firsttemporarily holding member 53 in a state being buried in the adhesive55.

FIG. 18 shows a state after the first substrate 51 is removed by theabove-described peeling. At this time, since the GaN based lightemitting diodes 52 have been peeled from the first substrate 51 madefrom sapphire by laser abrasion, gallium (Ga) 56 is precipitated on thepeeled plane. Such deposited gallium (Ga) must be removed by etching.Concretely, as shown in FIG. 19, gallium (Ga) 56 is removed by wetetching using a water solution containing NaOH or diluted nitric acid.Subsequently, as shown in FIG. 20, the peeled plane is further cleanedby oxygen plasma (O₂ plasma), and thereafter, dicing grooves 57 areformed in the adhesive 55 by dicing so as to isolate the light emittingdiodes 52 from each other. The light emitting diodes 52 will beselectively separated from the first temporarily holding member 53 asdescribed later. The dicing process can be performed by a usual blade.Alternatively, if a narrow cut-in-depth of about 20 μm or less isrequired, laser cutting using the above-described laser beam may beperformed. The cut-in-depth is dependent on a size of each lightemitting diode 52 covered with the adhesive 55 within a pixel of animage display unit, and as one example, the grooves are formed by usingan excimer laser beam, to form each of the light emitting diodes 52 intoa specific shape, thereby forming a chip.

The selective separation of the light emitting diodes 52 is performed asfollows.

As shown in FIG. 21, the cleaned light emitting diodes 52 are coatedwith a thermoplastic adhesive 58, and a second temporarily holdingmember 59 is overlapped to the adhesive 58. Like the first temporarilyholding member 53, the second temporarily holding member 59 may be madefrom glass, quartz glass, or plastic, and in this embodiment, the secondtemporarily holding member 59 is made from quartz glass. A peelablelayer 60 made from polyimide is also formed on the surface of the secondtemporarily holding member 59.

As shown in FIG. 22, only a portion, corresponding to a light emittingdiode 52 a to be transferred, of the first temporarily holding member 53is irradiated with laser beams from the back side of the firsttemporarily holding member 53, whereby the light emitting diode 52 a ispeeled from the first temporarily holding member 53 by laser abrasion.At the same time, a portion, corresponding to the light emitting diode52 a to be transferred, of the thermoplastic adhesive 58 of the secondtemporarily holding member 59 is irradiated with visible rays orinfrared laser beams from the back side of the second temporarilyholding member 59, whereby the irradiated portion of the thermoplasticadhesive 58 is once melted and cured. As a result, when the secondtemporarily holding member 59 is peeled from the first temporarilyholding member 53, only the light emitting diode 52 a to be transferredis selectively separated from the first temporarily holding member 53 asshown in FIG. 23 and is transferred to the second temporarily holdingmember 59.

After the above-described selective separation, as shown in FIG. 24, aresin is applied to cover the transferred light emitting diode 52, toform a resin layer 61. Subsequently, as shown in FIG. 25, the thicknessof the resin layer 61 is reduced by oxygen plasma or the like, and asshown in FIG. 26, a via-hole 62 is formed at a portion, corresponding tothe light emitting diode 52, of the resin layer 61 by laser irradiation.The formation of the via-hole 62 may be performed by using an excimerlaser beam, a harmonic YAG laser beam, or a carbon dioxide laser beam.The diameter of the via-hole 62 is typically set to a value ranging fromabout 3 to 7 μm.

An anode side electrode pad 63 is formed so as to be connected to ap-electrode of the light emitting diode 52 through the via-hole 62. Theanode side electrode pad 63 is typically made from Ni/Pt/Au. FIG. 27shows a state that after the light emitting diode 52 is transferred tothe second temporarily holding member 59, the via-hole 62 is formed inthe portion, on the anode electrode (p-electrode) side, of the resinlayer 61, and then the anode side electrode pad 63 is formed on theresin layer 61 so as to be buried in the via-hole 62.

A portion, being in contact with the light emitting diode 52, of theelectrode pad 63 thus formed is then converted into an ohmic contact tothe light emitting diode 52 by making use of the alloying methodaccording to the present invention.

To be more specific, after the electrode pad 63 is formed, only aportion, being in contact with the light emitting diode 52, of theelectrode pad 63 is selectively irradiated with laser beams, forexample, YAG laser beams (wavelength: 532 nm), to be alloyed with thelight emitting diode 52, whereby the portion, being in contact with thelight emitting diode 52, of the electrode pad 63 is converted into anohmic contact to the light emitting diode 52. At this time, since thelight emitting diode 52 remains as transferred to the second temporarilyholding member 59 in a state being buried in the resin layer 61 and thelike, the portion, being in contact with the light emitting diode 52, ofthe electrode pad 63 can be alloyed with the light emitting diode 52 byirradiation of laser beams having a low irradiation energy, to be thusconverted into a desirable ohmic contact without giving any damage tothe light emitting diode 52.

After the anode side electrode pad 63 is formed, the light emittingdiode 52 is transferred to a third temporarily holding member 64 forforming a cathode side electrode on a surface, on the side opposed tothe side provided with the anode side electrode pad 63, of the lightemitting diode 52. The third temporarily holding member 64 is typicallymade from quartz glass. Before transfer, as shown in FIG. 28, anadhesive 65 is applied to cover the light emitting diode 52 providedwith the anode side electrode pad 63 and the resin layer 61, and thenthe third temporarily holding member 64 is stuck on the adhesive 65. Insuch a state, laser irradiation is performed from the back side of thesecond temporarily holding member 59, whereby peeling by laser abrasionoccurs at an interface between the second temporarily holding member 59made from quartz glass and the peelable layer 60 made from polyimide onthe second temporarily holding member 59. As a result, the lightemitting diode 52 and the resin layer 61 formed on the peelable layer 60are transferred to the third temporarily holding member 64. FIG. 29shows the state after the second temporarily holding member 59 isseparated from the light emitting diode 52 and the resin layer 61.

The formation of the cathode side electrode will be performed asfollows. After the above-described transfer step is terminated, as shownin FIG. 30, the peelable layer 60 and an excessive portion of the resinlayer 61 are removed by O₂ plasma until a contact semiconductor layer(n-electrode) of the light emitting diode 52 is exposed. In the statethat the light emitting diode 52 is held by the adhesive 65 of the thirdtemporarily holding member 64, the back side of the light emitting diode52 is taken as the n-electrode side (cathode electrode side), andaccordingly, by forming an electrode pad 66 as shown in FIG. 31, theelectrode pad 66 is electrically connected to the n-electrode on theback surface of the light emitting diode 52.

A portion, being in contact with the light emitting diode 52, of theelectrode pad 66 is also converted into an ohmic contact to the lightemitting diode 52 by making use of the alloying method according to thepresent invention. To be more specific, after the electrode pad 66 isformed, only a portion, being in contact with the light emitting diode52, of the electrode pad 66 is selectively irradiated with laser beams,for example, YAG laser beams (wavelength: 532 nm), to be thus alloyedwith the light emitting diode 52.

The size of the cathode side electrode pad 66 is typically set to about60 μm square. The electrode pad 66 may be made from a transparentmaterial (ITO or ZnO) or Ti/Al/Pt/Au. In the case of using thetransparent electrode, even if the electrode pad covers a large area ofthe back surface of the light emitting diode 52, it does not block lightemission, and accordingly, the size of the electrode pad can beincreased and also the patterning accuracy can be made rough, tofacilitate the patterning process.

The light emitting diodes 52 buried in the resin layer 61 and theadhesive 65 are then individually cut into the above-describedresin-covered chips by laser dicing or the like. FIG. 32 shows the stepof cutting the light emitting diodes 52 by laser dicing. The laserdicing is performed by using a line-shaped laser beam so as to cut theresin layer 61 and the adhesive 65 until the third temporarily holdingmember 64 is exposed. The light emitting diodes 52 are cut into theresin-covered chips each having a specific size by laser dicing, and arecarried to a mounting step to be described later.

In the mounting step, each light emitting diode 52 in the form of theresin-covered chip is peeled from the third temporarily holding member64 by combination of mechanical means (attraction of the device byvacuum suction) and laser abrasion. FIG. 33 shows a state that one ofthe light emitting diodes 52 arrayed on the third temporarily holdingmember 64 is picked up by an attracting device 67. The attracting device67 has attracting holes 68 opened in a matrix corresponding to a pixelpitch of an image display unit in order to collectively attract a numberof the light emitting diodes 52. The attracting holes 68, each having anopening diameter of about 100 μm, are arranged in a matrix with a pitchof 600 μm. Accordingly, the attracting device 67 can collectivelyattract 300 pieces of the light emitting diodes 52. A member in whichthe attracting holes 68 are to be formed may be produced from Ni byelectrocasting, or formed of a plate made from a metal such as astainless steel (SUS), and the attracting holes 68 are formed in themember by etching. An attracting chamber 69 is formed at the depth ofthe attracting hole 68. By making the pressure in the attracting chamber69 negative, the attracting device 67 can attract the light emittingdiode 52. Since each light emitting diode 52 is in a state being coveredwith the adhesive layer 61 whose surface is nearly flatted, the lightemitting diode 52 can be easily, selectively attracted by the attractingdevice 67.

To stably hold, at the time of attraction of the light emitting diode 52(resin-covered chip) by vacuum suction, the diode 52 at a specificposition, the attracting device 67 is preferably provided with deviceposition displacement preventing means. FIG. 34 shows one example of theattracting device 67 provided with device position displacementpreventing means 70. In this embodiment, the device positiondisplacement preventing means 70 is formed as a positioning pin which isbrought into contact with a peripheral surface of the resin-coveredchip. By bringing the positioning pin into contact with the peripheralsurface of the resin-covered chip (more concretely, the cut plane of theresin layer 61 cut by laser dicing), the resin-covered chip (that is,the light emitting diode 52) is accurately positioned to the attractingdevice 67. The cut plane of the resin layer 61 cut by laser dicing isnot a perfectly vertical plane but is a plane having a taper of 5 to 10degrees with respect to the vertical plane. Accordingly, the positioningpin (device position displacement preventing means 70) may be designedto have the same taper. With the use of the positioning pin having thetaper, even if a slight positional displacement occurs between the lightemitting diode 52 and the attracting device 67, such a positionaldisplacement can be readily corrected.

The peeling of the light emitting diode 52 can be smoothly performed bycombination of the attraction of the device 52 by the attracting device67 and peeling of the resin-covered chip by laser abrasion. The laserabrasion is performed by irradiation of laser beams from the back sideof the third temporarily holding member 64, to cause peeling at aninterface between the third temporarily holding member 64 and theadhesive 65.

FIG. 35 is a view showing the transfer of the light emitting diode 52 toa second substrate 71. The second substrate 71 is a wiring substratehaving a wiring layer 72. Before transfer of the light emitting diodes52 to the second substrate 71, an adhesive layer 73 is formed on thesecond substrate 71. By curing a portion, located under the lightemitting diode 52 to be transferred, of the adhesive layer 73, the lightemitting diode 52 can be fixedly arrayed on the second substrate 71. Atthe time of this mounting, the pressure of the attracting chamber 69 ofthe attracting device 67 becomes high, to release the attraction of thelight emitting diode 52 to the attracting device 67. The adhesive layer73 is made from an UV-curing type adhesive, a thermosetting adhesive, ora thermoplastic adhesive. In addition, the light emitting diodes 52 thusarrayed on the second substrate 71 are spaced from each other with apitch larger than a pitch of the light emitting diodes 52 held on thethird temporarily holding member 64. The energy for curing the resin ofthe adhesive layer 73 is given from the back side of the secondsubstrate 71. Only a portion, located under the light emitting diode 52to be transferred, of the adhesive layer 73 may be cured to be bonded tothe adhesive layer 73 by irradiation of ultraviolet rays if the adhesivelayer 73 is made from an UV-curing type adhesive, or by heating with theaid of infrared rays if the adhesive layer 73 is made from athermosetting adhesive; or may be melted to be bonded to the adhesivelayer 73 by irradiation of infrared rays or laser beams if the adhesivelayer 73 is made from a thermoplastic adhesive.

FIG. 36 is a view showing a process of arraying another light emittingdiode 74 on the second substrate 71. By mounting the light emittingdiodes of a plurality of colors on the second substrate 71 at respectivepositions corresponding to the colors by means of the attracting device67 shown in FIG. 33 or 34, a pixel composed of the light emitting diodesof the plurality of colors can be formed with a pixel pitch fixed. Theshapes of the light emitting diodes 52 and 74 are not necessarilyidentical to each other. In the example shown in FIG. 36, the red lightemitting diode 74 has a planar structure including no hexagonal pyramidshaped GaN layer and is different in shape from the other light emittingdiode 52; however, in this stage, each of the light emitting diodes 52and 74 has been already covered with the resin layer 61 and the adhesive65 to be thus formed into a resin-covered chip, and therefore, the lightemitting diodes 52 and 74 can be handled in the same manner irrespectiveof the difference in device structure therebetween.

As shown in FIG. 37, an insulating layer 75 is formed in such a manneras to cover the light emitting diodes 52 and 74 each of which is in theform of the resin-covered chip. The insulating layer 75 may be made froma transparent epoxy type adhesive, an UV-curing type adhesive, orpolyimide. The formation of the insulating layer 75 is followed byformation of wiring.

FIG. 38 is a view showing a wiring forming step, in which openings 76,77, 78, 79, 80, and 81 are formed in the insulating layer 75, and wiringlines 82, 83, and 84 for connecting electrode pads for anodes andcathodes of the light emitting diodes 52 and 74 to the wiring layer 72of the second substrate 71 are formed. Since the areas of the electrodepads of the light emitting diodes 52 and 74 are large, the shapes of theopenings, that is, via-holes can be made large, with a result that thepositioning accuracy of each via-hole may be made rough as compared witha via-hole directly formed in each light emitting diode. For example,since each of the electrode pads has a size of about 60 μm square asdescribed above, the via-hole having a diameter of about 20 μm can beformed. The via-holes are of three kinds connected to the wiringsubstrate, the anode electrode, and the cathode electrode. The depth ofeach via-hole is optimized by controlling a pulse number of a laser beamdepending on the kind of the via-hole.

After the wiring in the above-described wiring step is terminated, asshown in FIG. 39, a protective layer 85 and a black mask 86 are formed,to accomplish a panel of an image display unit. The protective layer 85may be made from the transparent epoxy adhesive used for the insulatinglayer 75 shown in FIG. 37. The protective layer 85 is heated to becured, to perfectly cover the wiring. After that, a driver IC isconnected to the wiring at the end portion of the panel, to produce adrive panel.

In the above-described method of arraying light emitting devices, sincethe light emitting diodes 52 are already enlargedly spaced from eachother on each of the temporarily holding member 59 and 64, therelatively large electrode pads 63 and 66 can be each provided by makinguse of the large distance between adjacent two of the devices 52, andsince the wiring is performed by making use of the relatively largeelectrode pads 63 and 66, even if the size of the final unit issignificantly larger than the device size, the wiring can be easilyformed. Also, according to the method of arraying light emitting devicesin this embodiment, since each light emitting diode 52 is covered withthe cured resin layer 61 whose surface is flattened, the electrode pads63 and 66 can be accurately formed on the flattened front and backsurfaces of the resin layer 61 and can be also disposed so as to extendto a region wider than the device size, with a result that the handlingof the light emitting diode 52 by the attracting jig in the secondtransfer step can be facilitated.

As described above, according to the alloying method and wiring formingmethod in accordance with the present invention, it is possible toreadily alloy only a necessary portion of a metal layer with asemiconductor device by laser irradiation, thereby converting thenecessary portion into an ohmic contact without degradingcharacteristics of the semiconductor device, and since the energy oflaser beams used to irradiate the above necessary portion can be set toa low value, it is possible to enhance the throughput, for example, byincreasing an irradiated area, and hence to significantly reduce theproduction cost.

According to the display device forming method in accordance with thepresent invention, it is possible to fabricate a reliable display devicehaving a structure including light emitting devices modularized in theform of resin-covered chips on which desirable electrodes can be formedand which are allowed to be easily carried and easily mounted to a basebody. Also, it is possible to provide a method of fabricating an imagedisplay unit having an excellent performance at a high productivity anda low cost by applying the above-described alloying method, wiringforming method, and display device forming method according to thepresent invention.

While the preferred embodiments of the present invention have beendescribed using the specific terms, such description is for illustrativepurposes only, and it is to be understood that changes and variationsmay be made without departing from the sprit and scope of the followingclaims.

1. An alloying method comprising the steps of: forming a metal layer ona semiconductor structure that is secured to a material having a lowthermal conductivity; and alloying an interface between thesemiconductor and the metal layer by irradiating an area of theinterface between the semiconductor and the metal layer with a laserbeam having a wavelength absorbable in at least one of the semiconductorand the metal layer.
 2. An alloying method according to claim 1, whereinthe irradiation energy of the laser beam is in a range of 20 to 100mJ/cm².
 3. An alloying method according to claim 1, wherein the materialhaving a low thermal conductivity is a resin or amorphous silicon.
 4. Analloying method according to claim 1, wherein the semiconductor is GaAs.5. An alloying method according to claim 1, wherein the laser beam is anYAG laser beam.
 6. An alloying method according to claim 1, wherein thelaser irradiation step comprises selectively irradiating substantiallyonly the area of the interface between the semiconductor and the metallayer with the laser beam, thereby alloying the interface between thesemiconductor and the metal layer only in the irradiated region.
 7. Analloying method according to claim 1, wherein said semiconductor has alow temperature growth layer which is formed by epitaxial growth at atemperature lower than that at which a portion being in contact with themetal layer is formed.
 8. An alloying method according to claim 1,wherein said metal layer forming step comprises forming metal layers onboth surfaces of the semiconductor.
 9. A wiring forming methodcomprising the steps of: transferring a semiconductor device to amaterial having a low thermal conductivity; forming, as a wiringportion, a metal layer in contact with the semiconductor device; andalloying an interface between the semiconductor device and the wiringportion by irradiating the semiconductor device and the wiring portionwith a laser beam having a wavelength absorbable in at least one of thesemiconductor device and the wiring portion.
 10. A wiring forming methodaccording to claim 9, wherein the irradiation energy of the laser beamis in a range of 20 to 100 mJ/cm².
 11. A wiring forming method accordingto claim 9, wherein the material having a low thermal conductivity is aresin or amorphous silicon.
 12. A wiring forming method according toclaim 9, wherein the semiconductor device is made from GaAs.
 13. Awiring forming method according to claim 9, wherein the laser beam is anYAG laser beam.
 14. A wiring forming method according to claim 9,wherein said laser irradiation step comprises the step of selectivelyirradiating a portion of the semiconductor device the correspondingwiring portion with the laser beam, thereby alloying the interfacebetween the semiconductor device and the wiring portion only in theirradiated region.
 15. A wiring forming method according to claim 9,wherein said wiring portion forming step comprises forming wiringportions on both surfaces of the semiconductor device.
 16. A method offorming a display device, comprising the steps of: forming, after alight emitting device made from a semiconductor is buried in a resin, anelectrode composed of a metal layer on the surface of the resin; andalloying an interface between the light emitting device and theelectrode by irradiating the light emitting device and the electrodewith a laser beam having a wavelength absorbable in at least one of thesemiconductor and the electrode.
 17. A method of forming a displaydevice according to claim 16, wherein the semiconductor used for thelight emitting device is GaAs.
 18. A method of forming a display deviceaccording to claim 16, wherein the light emitting device is asemiconductor light emitting diode.
 19. A method of forming a displaydevice according to claim 16, wherein the laser beam is an YAG laserbeam.
 20. A method of forming a display device according to claim 16,wherein said electrode forming step comprises forming electrodes on bothsurfaces of the light emitting device.
 21. A method of fabricating animage display unit in which display devices in the form of chipsobtained by burying light emitting devices in a resin are arrayed in amatrix, said method comprising: a first transfer step of transferringlight emitting devices having been arrayed on a first substrate to atemporary holding member such that said devices are spaced farther apartthan said first substrate; a second transfer step of transferring thelight emitting devices having been held on the temporary holding memberto a second substrate such that said devices are spaced farther apartthan on said temporary holding member; and a wiring forming step offorming a wiring portion connected to each of the light emittingdevices; wherein said method further comprises: an electrode formingstep of forming, after each of the light emitting devices is buried in aresin, an electrode composed of a metal layer on the surface of theresin; and an alloying step of alloying an interface between the lightemitting device and the electrode by irradiating the light emittingdevice and the electrode with a laser beam having a wavelengthabsorbable in at least one of the semiconductor and the electrode.
 22. Amethod of fabricating an image display unit according to claim 21,wherein the semiconductor used for the light emitting device is GaAs.23. A method of fabricating an image display unit according to claim 21,wherein the light emitting device is a semiconductor light emittingdiode.
 24. A method of fabricating an image display unit according toclaim 21, wherein the laser beam is an YAG laser beam.
 25. A method offabricating an image display unit according to claim 21, wherein saidelectrode forming step comprises forming electrodes on both surfaces ofthe semiconductor device.